| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 25 V |
| hFE Min | 120 @2mA, 1V |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 25V 200mA 300MHz 625mW Through Hole TO-92-3
ON Semiconductor
10 Pages / 0.22 MByte
ON Semiconductor
9 Pages / 0.18 MByte
Central Semiconductor
Trans GP BJT NPN 25V 0.2A 3Pin TO-92 Box
ON Semiconductor
Trans GP BJT NPN 25V 0.2A 3Pin TO-92
Fairchild
Trans GP BJT NPN 25V 0.2A 3Pin TO-92
NXP
TRANSISTOR 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43, 3 PIN, BIP General Purpose Small Signal
Vishay Semiconductor
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN
Motorola
200mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
Samsung
NPN EPITAXIAL SILICON TRANSISTOR
ST Microelectronics
TRANSISTOR,BJT,NPN,25V V(BR)CEO,200MA I(C),TO-92
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
