| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 300 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 200 mA |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 25 V |
| Thermal Resistance | 83.3℃/W (RθJC) |
| Continuous Collector Current | 0.2A |
| hFE Min | 120 @2mA, 1V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2N4124G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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