| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-18 |
| Drain to Source Resistance (on) (Rds) | 60 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.8 W |
| Drain to Source Voltage (Vds) | 40.0 V |
| Breakdown Voltage (Drain to Source) | 40 V |
| Breakdown Voltage (Gate to Source) | 40 V |
| Continuous Drain Current (Ids) | 100 pA |
| Reverse Breakdown Voltage | 40 V |
| Input Capacitance (Ciss) | 14pF @20V(Vds) |
| Input Power (Max) | 1.8 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1.8 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 175℃ (TJ) |
Because of its uni-polar voltage control characteristics, the 2N4392 JFET transistor from Central Semiconductor is perfect for preventing a voltage drop in your circuit. Its maximum power dissipation is 1800 mW. It is made in a single configuration. This junction field effect transistor has a minimum operating temperature of -65 °C and a maximum of 175 °C.
Central Semiconductor
3 Pages / 0.51 MByte
Central Semiconductor
7 Pages / 0.27 MByte
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