| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | 1.00 A |
| Case/Package | TO-126-3 |
| Polarity | PNP |
| Power Dissipation | 30 W |
| Gain Bandwidth Product | 3 MHz |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 1A |
| hFE Min | 30 @500mA, 1V |
| hFE Max | 150 |
| Input Power (Max) | 30 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 30000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 7.74 mm |
| Size-Width | 2.66 mm |
| Size-Height | 11.04 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 500 |
The Power 3 A, 80 V Bipolar PNP Transistor is designed for driver circuits, switching and amplifier applications.
●Features
●---
● |
● Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
● Excellent Power Dissipation - PD = 30 W @ TC = 25°C
● Excellent Safe Operating Area
● Gain Specified to IC = 1.0 Amp
● Complement to NPN 2N4921, 2N4922, 2N4923
● Pb-Free Package is Available
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