TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 3 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -80.0 V |
Current Rating | -3.00 A |
Case/Package | TO-225-3 |
Halogen Free Status | Halogen Free |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 30 W |
Breakdown Voltage (Collector to Emitter) | 80 V |
Thermal Resistance | 4.16℃/W (RθJC) |
Continuous Collector Current | 3A |
hFE Min | 30 @500mA, 1V |
hFE Max | 150 |
Input Power (Max) | 30 W |
DC Current Gain (hFE) | 10 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 30000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Length | 7.74 mm |
Size-Width | 2.66 mm |
Size-Height | 11.04 mm |
Operating Temperature | -65℃ ~ 150℃ |
The 2N4920G is a -80V Silicon PNP Bipolar Plastic Medium Power Transistor designed for driver circuits, switching and amplifier applications.
● Excellent safe operating area
● Low saturation voltage
● Excellent power dissipation due to thermo pad construction
● High performance
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