| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 1.00 A |
| Case/Package | TO-225-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 30 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Thermal Resistance | 4.16℃/W (RθJC) |
| Continuous Collector Current | 1A |
| hFE Min | 30 @500mA, 1V |
| hFE Max | 150 |
| Input Power (Max) | 30 W |
| DC Current Gain (hFE) | 3 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 30000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 7.74 mm |
| Size-Width | 2.66 mm |
| Size-Height | 11.04 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The 2N4923G is a 1A NPN medium-power Silicon Transistor designed for driver circuits, switching and amplifier applications.
● Low saturation voltage
● Excellent power dissipation due to thermopad construction
● Excellent safe operating area
● Complement to PNP 2N4920G
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