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2N5089
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2N5089 Datasheet PDF - Central Semiconductor

Manufacturer:Central Semiconductor
Category:BJTs
Case Package:TO-226-3
Description:Trans GP BJT NPN 25V 0.05A 3Pin TO-92 Box
Documentation:2N5089 Datasheet (2 Pages)Package Outline Dimension on2 Page
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2N5089 Datasheet PDF (2 Pages)
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2N5089 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-226-3
Power Dissipation625 mW
Breakdown Voltage (Collector to Emitter)25 V
hFE Min400 @10mA, 5V
hFE Max400
Input Power (Max)625 mW
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-65 ℃
Power Dissipation (Max)625 mW
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2N5089 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingBulk
MaterialSilicon
Size-Length5.21 mm
Size-Width4.19 mm
Size-Height5.33 mm
Operating Temperature-65℃ ~ 150℃ (TJ)
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2N5089 Documents

2N5089 Datasheet
Central Semiconductor
2 Pages / 0.14 MByte
2N5089 Other Datasheet PDF
Central Semiconductor
4 Pages / 0.59 MByte
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