| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-206 |
| Drain to Source Resistance (on) (Rds) | 150 Ω |
| Power Dissipation | 500 mW |
| Reverse Breakdown Voltage | 30 V |
| Input Capacitance (Ciss) | 25pF @15V(Vds) |
| Input Power (Max) | 500 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
Easily implement this 2N5116 JFET from Central Semiconductor in your electronic circuit to use it as an electrical switch, amplifier, or voltage-controlled resistor. Its maximum power dissipation is 500 mW. This junction field effect transistor has an operating temperature range of -65 °C to 200 °C. It is made in a single configuration.
Central Semiconductor
1 Pages / 0.03 MByte
Central Semiconductor
11 Pages / 0.68 MByte
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