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2N5191
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2N5191 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:BJTs
Case Package:TO-126-3
Description:2N5191 Series NPN 60V 4A Power Transistor Through Hole - SOT-32
Documentation:2N5191 Datasheet (9 Pages)Package Outline Dimension on6 Page7 Page
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2N5191 Datasheet PDF (9 Pages)
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2N5191 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Frequency2 MHz
Number of Pins3 Pin
Voltage Rating (DC)60.0 V
Current Rating4.00 A
Case/PackageTO-126-3
PolarityNPN
Power Dissipation40 W
Breakdown Voltage (Collector to Base)60.0 V
Breakdown Voltage (Collector to Emitter)60 V
hFE Min25 @1.5A, 2V
hFE Max100
Input Power (Max)40 W
DC Current Gain (hFE)25
Operating Temperature (Max)150 ℃
Operating Temperature (Min)65 ℃
Power Dissipation (Max)40000 mW
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2N5191 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Designs
PackagingTube
MaterialSilicon
Size-Length7.8 mm
Size-Width2.7 mm
Size-Height10.8 mm
Operating Temperature150℃ (TJ)
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2N5191 Documents

2N5191 Datasheet
ST Microelectronics
9 Pages / 0.22 MByte
2N5191 Other Datasheet PDF
ST Microelectronics
4 Pages / 0.04 MByte
2N5191 Other References
ST Microelectronics
1 Pages / 0.16 MByte
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