TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | TO-126-3 |
Breakdown Voltage (Collector to Emitter) | 80 V |
hFE Min | 20 @1.5A, 2V |
Input Power (Max) | 40 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 80V 4A 2MHz 40W Through Hole TO-126
Central Semiconductor
4 Pages / 0.47 MByte
Central Semiconductor
4 Pages / 0.48 MByte
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