TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 2 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -60.0 V |
Current Rating | -4.00 A |
Case/Package | TO-225-3 |
Halogen Free Status | Halogen Free |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel, Dual P-Channel |
Power Dissipation | 40 W |
Breakdown Voltage (Collector to Emitter) | 60 V |
Thermal Resistance | 3.12℃/W (RθJC) |
Continuous Collector Current | 4A |
hFE Min | 25 @1.5A, 2V |
hFE Max | 100 |
Input Power (Max) | 40 W |
DC Current Gain (hFE) | 2 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 40000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Length | 7.8 mm |
Operating Temperature | -65℃ ~ 150℃ |
4 AMPERE POWER TRANSISTORS PNP SILICON 60 − 80 VOLTS
●These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191,2N5192.
●Features
●•Pb−Free Packages are Available
ON Semiconductor
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