TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 2 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -80.0 V |
Current Rating | -4.00 A |
Case/Package | TO-225-3 |
Halogen Free Status | Halogen Free |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 40 W |
Breakdown Voltage (Collector to Emitter) | 80 V |
Thermal Resistance | 3.12℃/W (RθJC) |
Continuous Collector Current | 4A |
hFE Min | 20 @1.5A, 2V |
hFE Max | 80 |
Input Power (Max) | 40 W |
DC Current Gain (hFE) | 80 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 40 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Length | 7.74 mm |
Size-Width | 2.66 mm |
Size-Height | 11.04 mm |
Operating Temperature | -65℃ ~ 150℃ |
The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits.
● Complement to NPN 2N5191 and 2N5192
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