| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 100 mA |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Gain Bandwidth Product | 30 MHz |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 200 |
| hFE Max | 600 |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The 2N5210BU is a NPN Bipolar Transistor designed for low noise, high gain and general purpose amplifier applications at collector currents from 1µA to 50mA.
● -55 to 150°C Operating junction temperature range
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