TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 30 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 50.0 V |
Current Rating | 100 mA |
Case/Package | TO-92-3 |
Polarity | NPN |
Power Dissipation | 625 mW |
Gain Bandwidth Product | 30 MHz |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 0.1A |
hFE Min | 200 |
hFE Max | 600 |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Box |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 50V 100mA 30MHz 625mW Through Hole TO-92-3
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