TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 30 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-92-3 |
Power Dissipation | 0.625 W |
Breakdown Voltage (Collector to Emitter) | 50 V |
hFE Min | 200 @100µA, 5V |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tape & Reel (TR) |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ |
ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
9 Pages / 0.2 MByte
ON Semiconductor
2 Pages / 0.04 MByte
ON Semiconductor
13 Pages / 0.34 MByte
ON Semiconductor
Trans GP BJT NPN 50V 0.05A 3Pin TO-92
Central Semiconductor
Trans Npn 50V 0.05A To-92
Fairchild
Trans GP BJT NPN 50V 0.1A 3Pin TO-92
Motorola
MOT# 2N5210 Bipolar Small Signal NPN Gen Pur SS
NTE Electronics
NTE ELECTRONICS 2N5210 Bipolar (BJT) Single Transistor, NPN, 50V, 30MHz, 625mW, 100mA, 250 hFE
Samsung
NPN EPITAXIAL SILICON TRANSISTOR
HGF
TRANS NPN 50V 0.05A TO-92
Micro Electronics
NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
TI
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
ROHM Semiconductor
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.