TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -120 V |
Current Rating | 500 mA |
Case/Package | TO-226-3 |
Polarity | PNP |
Power Dissipation | 225 mW |
Breakdown Voltage (Collector to Emitter) | 120 V |
Continuous Collector Current | 0.6A |
hFE Min | 40 @10mA, 5V |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Material | Silicon |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 120V 600mA 400MHz 625mW Through Hole TO-92-3
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