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2N5416
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2N5416 Datasheet PDF - Central Semiconductor

Manufacturer:Central Semiconductor
Category:BJTs
Case Package:TO-39-3
Description:2N5416 Series 300V 1A Through Hole PNP Silicon Transistor - TO-39
Documentation:2N5416 Datasheet (4 Pages)Package Outline Dimension on2 Page4 Page
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2N5416 Datasheet PDF (4 Pages)
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2N5416 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Frequency15 MHz
Number of Pins3 Pin
Case/PackageTO-39-3
Power Dissipation1 W
Breakdown Voltage (Collector to Emitter)300 V
hFE Min30
Input Power (Max)1 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-65 ℃
Power Dissipation (Max)1000 mW
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2N5416 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingBox
MaterialSilicon
Size-Length9.4 mm
Size-Width9.4 mm
Size-Height6.6 mm
Operating Temperature-65℃ ~ 200℃ (TJ)
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2N5416 Documents

2N5416 Datasheet
Central Semiconductor
4 Pages / 0.83 MByte
2N5416 Other Datasheet PDF
Central Semiconductor
4 Pages / 0.83 MByte
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