| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | UA |
| Polarity | PNP |
| Power Dissipation | 0.75 W |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| Continuous Collector Current | 1A |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 750 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
This family of 2N5415UA and 2N5416UA epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. The UA package is hermetically sealed and provides a low profile for minimizing board height. These devices are also available in the long-leaded TO-5, short-leaded TO-39 and low profile U4 packaging.
Microsemi
2 Pages / 0.05 MByte
Microsemi
6 Pages / 0.31 MByte
ST Microelectronics
Trans GP BJT PNP 300V 1A 3Pin TO-39 Bag
Microsemi
Trans GP BJT PNP 300V 1A 3Pin TO-5
Multicomp
MULTICOMP 2N5416 Bipolar (BJT) Single Transistor, PNP, -300V, 15MHz, 1W, -1A, 30
Central Semiconductor
2N5416 Series 300V 1A Through Hole PNP Silicon Transistor - TO-39
CDIL
Transistor: PNP; bipolar; 300V; 1A; 0.1W(1/10W); TO39
Philips
PNP high-voltage transistors
Boca Semiconductor
Trans GP BJT PNP 300V 1A 3Pin TO-39
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
