TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 300 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 140 V |
Current Rating | 600 mA |
Case/Package | TO-226-3 |
Polarity | NPN |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Emitter) | 140 V |
Continuous Collector Current | 0.6A |
hFE Min | 60 @10mA, 5V |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape |
Material | Silicon |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Features
●• Pb−Free Packages are Available
●• Device Marking: Device Type, e.g., 2N5550, Date Code
ON Semiconductor
6 Pages / 0.08 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
13 Pages / 0.34 MByte
ON Semiconductor
Trans GP BJT NPN 140V 0.6A 3Pin TO-92 Box
Fairchild
Trans GP BJT NPN 140V 0.6A 3Pin TO-92
KEC(Korea Electronics)
EPITAXIAL PLANAR NPN TRANSISTOR
Central Semiconductor
Trans GP BJT NPN 140V 0.6A 3Pin TO-92 Box
Philips
NPN high-voltage transistors
NXP
Trans Npn 140V 0.6A To92 Trans Npn 140V 0.6A To92
Diotec Semiconductor
General Purpose Si-Epitaxial Planar Transistors
Samsung
NPN EPITAXIAL SILICON TRANSISTOR
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.