TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 300 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-92-3 |
Power Dissipation | 0.625 W |
Breakdown Voltage (Collector to Emitter) | 140 V |
hFE Min | 20 |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 4.58 mm |
Size-Width | 3.86 mm |
Size-Height | 4.58 mm |
The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
●Features
●---
● |
● Pb-Free Packages are Available
ON Semiconductor
6 Pages / 0.08 MByte
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