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2N5551
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2N5551 Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:BJTs
Case Package:TO-226-3
Description:Trans GP BJT NPN 160V 0.6A 3Pin TO-92 Bulk
Documentation:2N5551 Datasheet (6 Pages)Package Outline Dimension on6 Page
Part Numbering System on1 Page5 Page6 Page
2N5551 Application Note (13 Pages)
Pictures:
Symbol
Footprint
Pinout
Product Pictures
2N5551 Datasheet PDF (6 Pages)
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2N5551 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Voltage Rating (DC)160 V
Current Rating600 mA
Case/PackageTO-226-3
Number of Positions3 Position
PolarityN-Channel
Power Dissipation625 mW
Breakdown Voltage (Collector to Emitter)160 V
hFE Min80 @10mA, 5V
Input Power (Max)625 mW
DC Current Gain (hFE)80
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)625 mW
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2N5551 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusUnknown
PackagingBulk
MaterialSilicon
Operating Temperature-55℃ ~ 150℃ (TJ)
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2N5551 Documents

2N5551 Datasheet
ON Semiconductor
6 Pages / 0.08 MByte
2N5551 Other Datasheet PDF
ON Semiconductor
31 Pages / 0.08 MByte
2N5551 Drawing Diagrams
ON Semiconductor
3 Pages / 0.05 MByte
2N5551 Application Note
ON Semiconductor
13 Pages / 0.34 MByte
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