| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 300 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 160 V |
| hFE Min | 80 @10mA, 5V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 30 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -50 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bag |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
●Features
●---
● |
● Pb-Free Packages are Available
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