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2N5551ZL1G
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2N5551ZL1G Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:BJTs
Case Package:TO-226-3
Description:TO-92 NPN 160V 0.6A
Documentation:2N5551ZL1G Datasheet (6 Pages)Package Outline Dimension on6 Page
Part Numbering System on1 Page5 Page6 Page
2N5551ZL1G Application Note (13 Pages)
Pictures:
Symbol
Footprint
Pinout
Product Pictures
2N5551ZL1G Datasheet PDF (6 Pages)
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2N5551ZL1G Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Frequency300 MHz
Number of Pins3 Pin
Voltage Rating (DC)160 V
Current Rating600 mA
Case/PackageTO-226-3
PolarityNPN
Power Dissipation0.625 W
Breakdown Voltage (Collector to Emitter)160 V
Continuous Collector Current0.6A
hFE Min80 @10mA, 5V
Input Power (Max)625 mW
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)625 mW
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2N5551ZL1G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape
MaterialSilicon
Operating Temperature-55℃ ~ 150℃ (TJ)
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2N5551ZL1G Documents

2N5551ZL1G Datasheet
ON Semiconductor
6 Pages / 0.08 MByte
2N5551ZL1G Other Datasheet PDF
ON Semiconductor
11 Pages / 0.39 MByte
2N5551ZL1G Drawing Diagrams
ON Semiconductor
3 Pages / 0.05 MByte
2N5551ZL1G Application Note
ON Semiconductor
13 Pages / 0.34 MByte

2N5551ZL1 Documents

2N5551ZL1 Datasheet PDF
ON Semiconductor
TO-92 NPN 160V 0.6A
2N5551ZL1G Datasheet PDF
ON Semiconductor
TO-92 NPN 160V 0.6A
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