| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 250 V |
| Current Rating | 3.70 A |
| Case/Package | TO-225-3 |
| Polarity | N-Channel |
| Power Dissipation | 20 W |
| Gain Bandwidth Product | 10 MHz |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 25 |
| hFE Max | 250 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Size-Length | 7.74 mm |
| Size-Width | 2.66 mm |
| Size-Height | 11.04 mm |
| Minimum Packing Quantity | 500 |
Plastic NPN Silicon High-Voltage Power Transistor
●0.5 AMPERE POWER TRANSISTORS NPN SILICON 250–350 VOLTS 20 WATTS
●. . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
●•Excellent DC Current Gain –
● hFE= 30–250 @ IC= 100 mAdc
●•Current–Gain – Bandwidth Product –
● fT= 10 MHz (Min) @ IC= 50 mAdc
ON Semiconductor
4 Pages / 0.08 MByte
ON Semiconductor
6 Pages / 0.17 MByte
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2 Pages / 0.03 MByte
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