| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -25.0 A |
| Case/Package | TO-204-2 |
| Polarity | PNP |
| Power Dissipation | 200 W |
| Gain Bandwidth Product | 4 MHz |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 25A |
| hFE Min | 35 |
| hFE Max | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tray |
| Material | Silicon |
| Size-Length | 39.37 mm |
| Size-Width | 26.67 mm |
| Size-Height | 8.51 mm |
| Minimum Packing Quantity | 100 |
The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.
●Features
●---
● |
● Low Collector-Emitter Saturation Voltage
●VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
● Low Leakage Current
●ICEX = 1.0 mAdc (max) at Rated Voltage
● Excellent DC Current Gain
●hFE = 20 (min) at IC = 10 Adc
● High Current Gain Bandwidth Product
●ft = 4.0 MHz (min) at IC = 1.0 Adc
● Pb-Free Packages are Available
ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
8 Pages / 0.12 MByte
ON Semiconductor
1 Pages / 0.03 MByte
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