| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 4 MHz |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -25.0 A |
| Case/Package | TO-204-2 |
| Number of Positions | 2 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 200 W |
| Gain Bandwidth Product | 4 MHz |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Thermal Resistance | 0.875℃/W (RθJC) |
| Continuous Collector Current | 25A |
| hFE Min | 20 |
| hFE Max | 100 |
| Input Power (Max) | 200 W |
| DC Current Gain (hFE) | 4 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Material | Silicon |
| Size-Length | 39.37 mm |
| Size-Width | 26.67 mm |
| Size-Height | 8.51 mm |
| Operating Temperature | -65℃ ~ 200℃ |
The 2N5884G is a 25A PNP high-power complementary Silicon Transistor designed for general-purpose power amplifier and switching applications.
● Low collector-emitter saturation voltage (1VDC maximum VCE(sat) @ 15A DC IC)
● Low leakage current (1mA DC maximum ICEX @ rated voltage)
● Excellent DC current gain (20 minimum hFE @ 10A DC IC)
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ON Semiconductor
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1 Pages / 0.03 MByte
ON Semiconductor
1 Pages / 0.13 MByte
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