| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 75 W |
| Breakdown Voltage (Collector to Emitter) | 80.0 V |
| DC Current Gain (hFE) | 20000 |
| Operating Temperature (Max) | 150 ℃ |
The 2N6041 is a silicon PNP Darlington Transistor designed for general purpose amplifier and low-speed switching applications.
● High DC current gain
● 100V Minimum collector - emitter sustaining voltage VcE0(sus)
● Monolithic construction with built-in base-emitter shunt resistors
● -65 to 150°C Operating junction temperature range
Multicomp
1 Pages / 0.28 MByte
Multicomp
1 Pages / 0.08 MByte
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