| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 12.0 A |
| Case/Package | TO-3 |
| Power Rating | 150 W |
| Polarity | NPN |
| Power Dissipation | 150000 mW |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 750 @6A, 3V |
| Input Power (Max) | 150 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 4MHz (Min) |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bag |
| Operating Temperature | 200℃ (TJ) |
DESCRIPTION
●The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case.
●It is inteded for use in power linear and low frequency switching applications.
●■ STMicrolectronics PREFERRED SALESTYPE
●■ HIGH GAIN
●■ NPN DARLINGTON
●■ HIGH CURRENT
●■ HIGH DISSIPATION
●■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
●APPLICATIONS
●■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
ST Microelectronics
4 Pages / 0.04 MByte
ST Microelectronics
4 Pages / 0.04 MByte
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