| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 10 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -50.0 V |
| Current Rating | 7.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Thermal Resistance | 3.125℃/W (RθJC) |
| Continuous Collector Current | 7A |
| hFE Min | 30 @2.5A, 4V |
| hFE Max | 150 |
| Input Power (Max) | 40 W |
| DC Current Gain (hFE) | 10 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 40 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.28 mm |
| Size-Width | 4.83 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The 2N6109G is a 7A PNP complementary silicon Power Transistor designed for use in general-purpose amplifier and switching applications.
● High DC current gain
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