TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 2 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -20.0 A |
Case/Package | TO-204-2 |
Output Voltage | 100 V |
Output Current | 20 A |
Number of Positions | 2 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 160 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
Continuous Collector Current | 20A |
hFE Min | 750 @10A, 3V |
hFE Max | 18000 |
Input Power (Max) | 160 W |
DC Current Gain (hFE) | 100 |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 160000 mW |
Input Voltage | 5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tray |
Size-Length | 39.37 mm |
Size-Width | 26.67 mm |
Size-Height | 8.51 mm |
Operating Temperature | -65℃ ~ 200℃ (TJ) |
The 2N6287G is a -100V Silicon PNP Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low frequency switching applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
● High DC current gain
● Collector-emitter sustaining voltage(Vce (sus) = 100VDC minimum)
● Collector-base voltage (Vcbo = 100V)
● Emitter-base voltage (Vcbo = 5V)
ON Semiconductor
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ON Semiconductor
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