| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Case/Package | TO-33 |
| Polarity | NPN |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 5A |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
The NPN 2N6350 Darlington transistor from Microsemi is the perfect solution when amplified current gain values are needed. This Darlington transistor array"s maximum emitter base voltage is 12 V. This product"s maximum continuous DC collector current is 5 A, while its minimum DC current gain is 2000@1A@5 V|2000@5A@5V|400@10A@5V. It has a maximum collector emitter saturation voltage of 1.5@5mA@5A V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 12 V.
Microsemi
2 Pages / 0.04 MByte
Microsemi
8 Pages / 0.47 MByte
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