TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 40.0 V |
Current Rating | 500 mA |
Case/Package | TO-92-3 |
Polarity | NPN |
Power Dissipation | 625 mW |
Gain Bandwidth Product | 150 MHz |
Breakdown Voltage (Collector to Emitter) | 40 V |
Continuous Collector Current | 0.5A |
hFE Min | 30000 @100mA, 5V |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
ON Semiconductor brings you their latest NPN 2N6426RLRAG Darlington transistor, a component that can easily provide you with much higher current gain values. This Darlington transistor array"s maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@0.5mA@500mA V. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 20000@10mA@5 V|20000@500mA@5V|30000@100mA@5V. It has a maximum collector emitter saturation voltage of 1.2@0.5mA@50mA|1.5@0.5mA@500mA V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 12 V. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C.
ON Semiconductor
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ON Semiconductor
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