| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 200 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-92-3 |
| Power Dissipation | 0.625 W |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| hFE Min | 20 @50mA, 10V |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature | -55℃ ~ 150℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Size-Length | 4.58 mm |
| Size-Width | 3.86 mm |
| Size-Height | 4.58 mm |
| Operating Temperature | 150℃ (TJ) |
The High Voltage PNP Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
●Features
●---
● |
● Voltage and Current are Negative for PNP Transistors
● Pb-Free Package is Available
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