| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 850 V |
| Current Rating | 15.0 A |
| Case/Package | TO-3 |
| Number of Positions | 2 Position |
| Polarity | NPN |
| Power Dissipation | 175 W |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| hFE Min | 12 @5A, 2V |
| hFE Max | 30 |
| Input Power (Max) | 175 W |
| DC Current Gain (hFE) | 12 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 175000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bag |
| Size-Length | 39.5 mm |
| Size-Width | 26.2 mm |
| Size-Height | 8.7 mm |
| Operating Temperature | 200℃ (TJ) |
DESCRIPTION
●The 2N6547 is a silicon Multiepitaxial Mesa NPN transistor mounted in TO-3 metal case. It is particulary intended for switching and industrial applications from single and tree-phase mains.
●■ STMicroelectronics PREFERRED SALESTYPE
●■ NPN TRANSISTOR
●■ HIGH VOLTAGE CAPABILITY
●■ HIGH CURRENT CAPABILITY
●■ FAST SWITCHING SPEED
●APPLICATIONS
●■ SWITCH MODE POWER SUPPLIES
●■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS
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