| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-205 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.5 Ω |
| Power Dissipation | 25 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Rise Time | 30 ns |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 25000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 150℃ |
The 2N6802 is a HEXFET® N-channel Power MOSFET suitable for inverters, choppers and high energy pulse circuit. The efficient geometry and unique processing of this latest state of the art design achieves very low ON-state resistance combined with high transconductance. The HEXFET® transistor also features all of the well established advantages of MOSFET such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
● Repetitive avalanche rating
● Dynamic dV/dt rating
● Hermetically sealed
● Simple drive requirements
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