| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 5 Ω |
| Power Dissipation | 400 mW |
| Threshold Voltage | 3.9 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 50pF @25V(Vds) |
| Input Power (Max) | 400 mW |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ |
The 2N7000BU is an advanced small-signal N-channel enhancement-mode MOSFET produced using Fairchild"s proprietary high cell density DMOS technology. It minimizes ON-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. It is particularly suited for low-voltage, low-current applications, such as power MOSFET gate drivers and other switching applications.
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