| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 200 mA |
| Case/Package | TO-92-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 400 mW |
| Threshold Voltage | 3.9 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 200 mA |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 50pF @25V(Vds) |
| Input Power (Max) | 400 mW |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 400mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The 2N7000BU is an advanced small-signal N-channel enhancement-mode MOSFET produced using Fairchild"s proprietary high cell density DMOS technology. It minimizes ON-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. It is particularly suited for low-voltage, low-current applications, such as power MOSFET gate drivers and other switching applications.
● Fast switching times
● Improved inductive ruggedness
● Lower input capacitance
● Extended safe operating area
● Improved high-temperature reliability
Fairchild
7 Pages / 0.1 MByte
Fairchild
6 Pages / 0.15 MByte
Fairchild
3 Pages / 0.5 MByte
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