| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 5 Ω |
| Power Dissipation | 1 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 60 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Input Capacitance (Ciss) | 60pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bag |
| Material | Silicon |
| Size-Length | 5.21 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Make an effective common source amplifier using this 2N7000-G power MOSFET from Microchip Technology. Its maximum power dissipation is 1000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
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