TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 200 mA |
Case/Package | TO-92-3 |
Power Rating | 400 mW |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 5 Ω |
Polarity | N-Channel |
Power Dissipation | 400 mW |
Threshold Voltage | 3.9 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 200 mA |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 50pF @25V(Vds) |
Input Power (Max) | 400 mW |
Fall Time | 10 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 400mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tape & Reel (TR) |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ |
The 2N7000TA is a N-channel enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers and other switching applications.
● Fast switching
● Lower input capacitance
● Extended safe operating area
● Improved inductive ruggedness
● Improved high temperature reliability
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