| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.2 Ω |
| Power Dissipation | 200 mW |
| Threshold Voltage | 2.1 V |
| Drain to Source Voltage (Vds) | 60 V |
| Input Capacitance (Ciss) | 20pF @25V(Vds) |
| Input Power (Max) | 200 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.93 mm |
| Operating Temperature | -55℃ ~ 150℃ |
This N-Channel enhancement mode field effect transistor is produced using Fairchild"s proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
●Features
●---
● |
● High density cell design for extremely low RDS(ON).
● Voltage controlled small signal switch.
● Rugged and Reliable.
● High saturation current capability..
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