| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-23-3 |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1.2 mm |
| Operating Temperature | -55℃ ~ 150℃ |
SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor Features 60 V, 300 mA N-channel Trench MOSFET Suitable for logic level gate drive sources Very fast switching Surface-mounted package Trench MOSFET technology
Panjit
5 Pages / 0.15 MByte
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