| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.86 Ω |
| Polarity | N-Channel |
| Power Dissipation | 420 mW |
| Threshold Voltage | 1 V |
| Input Capacitance | 26.7 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 310 mA |
| Rise Time | 1.2 ns |
| Maximum Forward Voltage (Max) | 1.2 V |
| Input Capacitance (Ciss) | 26.7pF @25V(Vds) |
| Input Power (Max) | 300 mW |
| Fall Time | 3.6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The 2N7002ET1G is a N-channel small signal MOSFET in Trench technology and low drain to source voltage. Suitable for low side load switch and level shift circuits.
● 1.2A Pulsed drain current
● ±20V Gate-source voltage
● Halogen-free
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