TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.78 Ω |
Polarity | N-Channel |
Power Dissipation | 830 mW |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 0.475A |
Operating Temperature (Max) | 150 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Cut Tape (CT) |
The 2N7002F is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
● Very Fast Switching
● Logic Level Threshold Compatible
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