TYPE | DESCRIPTION |
---|
Case/Package | SOT-363 |
Number of Channels | 2 Channel |
Drain to Source Resistance (on) (Rds) | 4000 mΩ |
Polarity | Dual N |
Power Dissipation | 0.2 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 0.1A |
TYPE | DESCRIPTION |
---|
Minimum Packing Quantity | 3000 |
60V N-Channel Enhancement Mode MOSFET FEATURES • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • In compliance with EU RoHS 2002/95/EC directives
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