| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 115 mA |
| Case/Package | SOT-23-3 |
| Power Rating | 0.225 W |
| Halogen Free Status | Halogen Free |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 7.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 mW |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 115 mA |
| Maximum Forward Voltage (Max) | 1.5 V |
| Input Capacitance (Ciss) | 50pF @25V(Vds) |
| Input Power (Max) | 225 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 225mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The 2N7002LT1G is a 60V N-channel small signal MOSFET capable of 300mW power dissipation and 115mA continuous drain current.
● Halogen-free/BFR-free
● ±20VDC Gate to source voltage
● 60VDC Drain to gate voltage
● 417°C/W Thermal resistance, junction to ambient
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