TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 115 A |
Case/Package | SOT-23-3 |
Halogen Free Status | Halogen Free |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 7.5 Ω |
Polarity | N-Channel |
Power Dissipation | 300 mW |
Threshold Voltage | 2.5 V |
Input Capacitance | 50.0 pF |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 115 mA |
Input Capacitance (Ciss) | 50pF @25V(Vds) |
Input Power (Max) | 225 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 225mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.04 mm |
Size-Width | 1.4 mm |
Size-Height | 1.01 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23
●Features
●---
● |
● Pb-Free Packages are Available
ON Semiconductor
4 Pages / 0.09 MByte
ON Semiconductor
9 Pages / 0.45 MByte
ON Semiconductor
17 Pages / 2.07 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
19 Pages / 1.07 MByte
ON Semiconductor
7 Pages / 0.6 MByte
Leshan Radio
Small Signal MOSFET 115 mAmps, 60 Volts
Leshan Radio
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, 318, 3 PIN
Fairchild
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SOT-23, 3 PIN
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