TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SC-70-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1 Ω |
Polarity | N-Channel |
Power Dissipation | 200 mW |
Threshold Voltage | 1.75 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 0.31A |
Input Capacitance (Ciss) | 30pF @10V(Vds) |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 0.26 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Cut Tape (CT) |
Size-Length | 2.2 mm |
Size-Width | 1.35 mm |
Size-Height | 1 mm |
The 2N7002PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
● Logic Level Compatible
● Very Fast Switching
● ESD Protection Upto 1.5kV
● AEC-Q101 Qualified
Fairchild
Trans MOSFET N-CH 60V 0.115A 3Pin SOT-23 T/R
ON Semiconductor
MOSFET Transistor, N Channel, 115mA, 60V, 1.2Ω, 10V, 2.1V
ST Microelectronics
Trans MOSFET N-CH 60V 0.2A 3Pin SOT-23 T/R
NXP
Trans MOSFET N-CH 60V 0.3A 3Pin TO-236AB
NTE Electronics
Trans MOSFET N-CH 60V 0.115A 3Pin SOT-23 T/R
Diotec Semiconductor
Small Signal Field-Effect Transistor,
Panjit
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Infineon
OptiMOS⢠Small-Signal-Transistor
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.