TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-323-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1 Ω |
Power Dissipation | 260 mW |
Threshold Voltage | 1.75 V |
Input Capacitance | 30 pF |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Rise Time | 4 ns |
Input Capacitance (Ciss) | 50pF @10V(Vds) |
Input Power (Max) | 260 mW |
Fall Time | 5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 260mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.2 mm |
Size-Width | 1.35 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The 2N7002PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
● Logic Level Compatible
● Very Fast Switching
● ESD Protection Upto 1.5kV
● AEC-Q101 Qualified
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