2N918 Datasheet PDF - Central Semiconductor

Manufacturer:	Central Semiconductor
Category:	BJTs
Case Package:	TO-72-3
Description:	RF Small Signal Bipolar Transistor, 0.05A I(C), 1Element, Silicon, NPN, TO-72
Documentation:	2N918 Datasheet (3 Pages)Package Outline Dimension on2 Page 3 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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2N918 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Case/Package	TO-72-3
Power Dissipation	300 mW
Gain Bandwidth Product	600 MHz
Breakdown Voltage (Collector to Emitter)	15 V
hFE Min	20 @3mA, 1V
Input Power (Max)	200 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	200 mW