| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -50.0 V |
| Current Rating | -2.00 A |
| Case/Package | TO-226-3 |
| Polarity | PNP |
| Power Dissipation | 0.9 W |
| Gain Bandwidth Product | 100 MHz |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 2A |
| hFE Min | 70 @500mA, 2V |
| Input Power (Max) | 900 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Size-Length | 5.21 mm |
| Size-Width | 4.19 mm |
| Size-Height | 7.87 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW Through Hole TO-92 (TO-226)
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